Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs

Multi-gate and "Gate-all-around" (GAA) MOSFETs are attractive for deeply-scaled CMOS as their geometry improves electrostatic control, which promises enhanced scalability, and enables lower channel doping, reducing random dopant fluctuations which are a significant source of variation for scaled bulk planar CMOS. Performance boosters such as the use of strain and alternate channel materials to improve carrier transport are essential for future CMOS technologies. In this evening panel discussion we present prospects and challenges for top-down fabricated uniaxial strained nanowire MOSFETs.