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Atmospheric-Pressure Plasma Activation for Low Temperature Bonding
- Source :
- ECS Transactions; October 2010, Vol. 33 Issue: 4 p319-327, 9p
- Publication Year :
- 2010
-
Abstract
- An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. Oxygen activation on PECVD oxide for bonding of temperature sensitive materials shows no pin hole when activating oxide with thickness more than 0.25 microns. Activation on thermal oxide by helium plasma also shows a pin hole free oxide. Bond strength approximately 1000 mJ/m2 is achieved after 250 degree celcius post-bond anneal which is about twice the bond strength of non-activated samples. Multiple UV components from the helium plasma were detected by spectograph. These UV spectra might have contributed to the bond strength enhancement in Si-SiO2 bonding.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 33
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs52649129