A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13?m CMOS Technology

MLA

Ning, Grace, et al. “A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13?M CMOS Technology.” ECS Transactions, vol. 34, no. 1, Mar. 2011, pp. 743–48. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edo&AN=ejs52648083&authtype=sso&custid=ns315887.

APA

Ning, G., Lin, P., Xing, C., Bian, A., Zhao, B., & Cao, L. (2011). A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13?m CMOS Technology. ECS Transactions, 34(1), 743–748.

Chicago

Ning, Grace, Paulchang Lin, Charles Xing, Allen Bian, Bo Zhao, and Lu Cao. 2011. “A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13?M CMOS Technology.” ECS Transactions 34 (1): 743–48. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edo&AN=ejs52648083&authtype=sso&custid=ns315887.