(Invited) Resistive RAM Memories from a Material Perspective: Exploration of the Switching for Several Oxides Using Ab Initio Simulations

The development of Resistive RAM (RRAM) devices requires a challenging selection process of materials in order to exceed the current FLASH memory technology. We review here some RRAM materials options thanks to ab initio simulations. Based on materials science and thermodynamics, calculations done in DFT (density functional theory), carefully suited to experimental context, are able to explain the essential mechanisms at the heart of RRAM devices operations like the Forming and SET/RESET steps.