Back to Search
Start Over
(Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications
- Source :
- ECS Transactions; July 2019, Vol. 92 Issue: 4 p41-46, 6p
- Publication Year :
- 2019
-
Abstract
- We have investigated the crystalline and electronic properties of group-IV semiconductor alloy thin films of Ge1[?]xSnx and Ge1[?]x[?]ySixSny. These semiconductor materials promise effective energy band engineering with type-I band alignment. Also, we have investigated the optoelectronic properties of Ge1[?]x[?]ySixSny/Ge1[?]xSnx/Ge1[?]x[?]ySixSny double heterostructure with measuring photoluminescence spectroscopy.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 92
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs52639030