Effect of ion energy and ion current on the synthesis of c-BN films by r.f. plasma CVD

Boron nitride films were synthesized by r.f. plasma CVD technique using borane-ammonia, nitrogen and argon as the precursor gases. The films were deposited onto Si (100) and fused silica substrates kept at different substrate temperatures (573–703 K). Hot emissive probe was utilized to measure the ion energy of the radicals bombarding the substrate during deposition. Effects of substrate temperature, ion energy and ion current on the c-BN content in the films were determined. Bombardment of energetic ions during growth has profound effect on the film quality. Initial layer seemed to contain boron rich hexagonal B<INF>51–2</INF> N phase.