Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOxDevices

Herein, dual‐functional nonvolatile and volatile memory occurrence in memristor based on oxide heterostructures is shown. The chemical composition of material is investigated and electrical measurements are performed to indicate the resistive switching stability under consecutive voltage sweep. The device shows robust nonvolatile memory switching (greater than 105sweep cycles) and self‐compliant volatile threshold switching (approximately 105nonlinearity) functions. Moreover, the underlying mechanism of the phenomenon is investigated to uncover how the two resistive switching modes happen. This work can provide a reference toward the design of dual‐functional memristors based on oxide heterostructures. Dual‐functional nonvolatile and volatile resistive memories is produced. The devices demonstrates robust nonvolatile memory switching and self‐compliant volatile threshold switching functions. A unified switching model is drawn according to the conductive filaments state under the combined action of the electric field and Joule heat. This work can provide a reference toward the design of dual‐functional memristors.