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Intrinsic Optoelectronic Characteristics of MoS2Phototransistors viaa Fully Transparent van der Waals Heterostructure

Authors :
Pak, Jinsu
Lee, Ilmin
Cho, Kyungjune
Kim, Jae-Keun
Jeong, Hyunhak
Hwang, Wang-Taek
Ahn, Geun Ho
Kang, Keehoon
Yu, Woo Jong
Javey, Ali
Chung, Seungjun
Lee, Takhee
Source :
ACS Nano; August 2019, Vol. 13 Issue: 8 p9638-9646, 9p
Publication Year :
2019

Abstract

In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron–hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2and lays the foundation for two-dimensional materials-based transparent phototransistors.

Details

Language :
English
ISSN :
19360851 and 1936086X
Volume :
13
Issue :
8
Database :
Supplemental Index
Journal :
ACS Nano
Publication Type :
Periodical
Accession number :
ejs50674924
Full Text :
https://doi.org/10.1021/acsnano.9b04829