Numerical Study of Strained GaAs1−xNx/GaAs Quantum-Well Laser

The optical gain of a strained GaAs1−xNx/GaAs quantum-well laser has been calculated for a nitrogen concentration of 0.03 corresponding to a so-called dilute alloy. The effect of the density of carriers along with that of the quantum well width on the optical gain of the considered laser have been investigated and analyzed. Besides, the emitted wavelength has been also derived as a function of the quantum well width. Numerical results clearly show that by increasing the density of carriers and the quantum well width the optical gain is increased. The emitted wavelength is also enhanced as the quantum well width is augmented. The laser diode being studied here is shown to emit in the infrared-red region of the electromagnetic spectrum.