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Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures

Authors :
He, Ming Chang
Hu, Li Xia
Zheng, Jun Ding
Wei, Wen Sheng
Xiao, Hai Lin
Ye, Jian Zhu
Qiao, Guan Jun
Source :
Materials Science Forum; May 2019, Vol. 954 Issue: 1 p176-181, 6p
Publication Year :
2019

Abstract

SiC heteropolytype structures indicate important applications in high frequency, large power solid devices etc. In this paper, the impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes with heteropolytype consisting of two semiconductors among the 3C-SiC, 4H-SiC and 6H-SiC are numerically simulated to investigate the static state and small signal characteristics at the atmospheric window frequency of 1.56 THz. The breakdown voltage, avalanche voltage, peak value of static electric field, the maximum generation rates of avalanche and tunneling, power conversion efficiency, admittance-frequency relation of the proposed SiC heteropolytype diodes are calculated, respectively. Comparing the obtained parameters of IMPATT diodes with those of MITATT devices, the results imply that tunneling shows little influence on the small signal performance of the heteropolytype IMPATT diodes included 3C-SiC material, which is different from those of the homopolytype counterparts.

Details

Language :
English
ISSN :
02555476 and 16629752
Volume :
954
Issue :
1
Database :
Supplemental Index
Journal :
Materials Science Forum
Publication Type :
Periodical
Accession number :
ejs50259043
Full Text :
https://doi.org/10.4028/www.scientific.net/MSF.954.176