Characterization of crystalline defects in ?-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography

Here, we investigate the dislocations in b-Ga2O3 single crystals grown by edge-defined film-fed growth (EFG) and halide vapor-phase epitaxy (HVPE) using synchrotron X-ray topography. The (001)- and ($\bar{2}01$)-oriented crystals grown in the [010] direction by EFG exhibited dislocations along the [?]010[?] direction with some dislocations oriented in a line; in addition, wandering dislocations were observed on the (001) surface. Based on the invisibility criterion, the Burgers vector of some dislocations was determined to be [?]010[?]. On the other hand, in the (001) film grown by HVPE over the EFG substrate, threading dislocations propagating in the [001] direction were observed. Furthermore, it was found that the dislocations on the substrate grown by EFG were inherited by the film formed by HVPE: a dislocation was generated in the film grown by HVPE at both ends of the void defects in the substrate grown by EFG.