Cite
Layer-by-Layer Assembly Enabled by the Anionic p-Dopant CN6-CP•–K+: a Route to Achieve Interfacial Doping of Organic Semiconductors
MLA
Karpov, Yevhen, et al. “Layer-by-Layer Assembly Enabled by the Anionic p-Dopant CN6-CP•–K+: A Route to Achieve Interfacial Doping of Organic Semiconductors.” ACS Applied Materials & Interfaces, vol. 11, no. 4, Jan. 2019, pp. 4159–68. EBSCOhost, https://doi.org/10.1021/acsami.8b15033.
APA
Karpov, Y., Kiriy, N., Formanek, P., Zessin, J., Hambsch, M., Mannsfeld, S. C. B., Lissel, F., Beryozkina, T., Bakulev, V., Voit, B., & Kiriy, A. (2019). Layer-by-Layer Assembly Enabled by the Anionic p-Dopant CN6-CP•–K+: a Route to Achieve Interfacial Doping of Organic Semiconductors. ACS Applied Materials & Interfaces, 11(4), 4159–4168. https://doi.org/10.1021/acsami.8b15033
Chicago
Karpov, Yevhen, Nataliya Kiriy, Petr Formanek, Jakob Zessin, Mike Hambsch, Stefan C. B. Mannsfeld, Franziska Lissel, et al. 2019. “Layer-by-Layer Assembly Enabled by the Anionic p-Dopant CN6-CP•–K+: A Route to Achieve Interfacial Doping of Organic Semiconductors.” ACS Applied Materials & Interfaces 11 (4): 4159–68. doi:10.1021/acsami.8b15033.