Back to Search
Start Over
Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2in the Presence of Defects, Strain, and Charged Impurities
- Source :
- ACS Nano; August 2018, Vol. 12 Issue: 10 p10565-10566, 2p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 19360851 and 1936086X
- Volume :
- 12
- Issue :
- 10
- Database :
- Supplemental Index
- Journal :
- ACS Nano
- Publication Type :
- Periodical
- Accession number :
- ejs46555952
- Full Text :
- https://doi.org/10.1021/acsnano.8b07086