Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2Field Effect Transistors

We investigated the effects of the structural defects intentionally created by electron-beam irradiation with an energy of 30 keV on the electrical properties of monolayer MoS2field effect transistors (FETs). We observed that the created defects by electron beam irradiation on the MoS2surface working as trap sites deteriorated the carrier mobility and carrier concentration with increasing the subthreshold swing value and shifting the threshold voltage in MoS2FETs. The electrical properties of electron-beam irradiated MoS2FETs were slightly improved by treating the devices with thiol-terminated molecules which presumably passivated the structural defects of MoS2. The results of this study may enhance the understanding of the electrical properties of MoS2FETs in terms of creating and passivating defect sites.