Growth and Characteristics of High Quality (200) and (111) Orientations Cubic Structure MgZnO Thin Films by Pulse Laser Deposition (PLD) Method

High quality (200) and (111) orientations cubic MgZnO thin films were made on (200) and (111) orientations MgO substrates separately under different condition with higher and lower migration energy of reactive atoms separately. The crystal quality of (111) orientation MgZnO thin film is higher than (200) one because of the stronger horizontal migration of atoms on (111) surface under high temperature condition, the surface of (200) orientation MgZnO thin film is smoother than (111) orientation one because of lower vertical growth speed of (200) MgZnO grains. The band gap of (111) orientation MgZnO thin film is smaller than (200) one because of more Zn atoms in (111) orientation MgZnO lattice than that in (200) ones. This paper gives an effective method to improve crystal quality of different orientation MgZnO thin film under different condition, which is meaningful in application of cubic MgZnO in different areas.