A study of Si plasma etching in CF4+O2gas with a planar‐type reactor

MLA

Kawata, H., et al. “A Study of Si Plasma Etching in CF4+O2gas with a Planar‐type Reactor.” Journal of Applied Physics, vol. 54, no. 5, May 1983, pp. 2720–26. EBSCOhost, https://doi.org/10.1063/1.332298.

APA

Kawata, H., Shibano, T., Murata, K., & Nagami, K. (1983). A study of Si plasma etching in CF4+O2gas with a planar‐type reactor. Journal of Applied Physics, 54(5), 2720–2726. https://doi.org/10.1063/1.332298

Chicago

Kawata, H., T. Shibano, K. Murata, and K. Nagami. 1983. “A Study of Si Plasma Etching in CF4+O2gas with a Planar‐type Reactor.” Journal of Applied Physics 54 (5): 2720–26. doi:10.1063/1.332298.