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A study of Si plasma etching in CF4+O2gas with a planar‐type reactor
- Source :
- Journal of Applied Physics; May 1983, Vol. 54 Issue: 5 p2720-2726, 7p
- Publication Year :
- 1983
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Volume :
- 54
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs43749403
- Full Text :
- https://doi.org/10.1063/1.332298