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Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide

Authors :
Holloway, H.
Bobb, L. C.
Source :
Journal of Applied Physics; June 1967, Vol. 38 Issue: 7 p2893-2896, 4p
Publication Year :
1967

Details

Language :
English
ISSN :
00218979 and 10897550
Volume :
38
Issue :
7
Database :
Supplemental Index
Journal :
Journal of Applied Physics
Publication Type :
Periodical
Accession number :
ejs43728864
Full Text :
https://doi.org/10.1063/1.1710019