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Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
- Source :
- Journal of Applied Physics; June 1967, Vol. 38 Issue: 7 p2893-2896, 4p
- Publication Year :
- 1967
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Volume :
- 38
- Issue :
- 7
- Database :
- Supplemental Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs43728864
- Full Text :
- https://doi.org/10.1063/1.1710019