Chemical Selectivity at Grain Boundary Dislocations in Monolayer Mo1–xWxS2Transition Metal Dichalcogenides

Grain boundaries (GBs) are unavoidable crystal defects in polycrystalline materials and significantly influence their properties. However, the structure and chemistry of GBs in 2D transition metal dichalcogenide alloys have not been well established. Here we report significant chemical selectivity of transition metal atoms at GB dislocation cores in Mo1–xWxS2monolayers. Different from classical elastic field-driven dislocation segregation in bulk crystals, the chemical selectivity in the 2D crystals originates prominently from variation of atomic coordination numbers at dislocation cores. This observation provides atomic insights into the topological effect on the chemistry of crystal defects in 2D materials.