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Mottness at finite doping and charge instabilities in cuprates
- Source :
- Nature Physics; August 2017, Vol. 13 Issue: 8 p806-811, 6p
- Publication Year :
- 2017
-
Abstract
- The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p → Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcrregion of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
Details
- Language :
- English
- ISSN :
- 17452473 and 17452481
- Volume :
- 13
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- Nature Physics
- Publication Type :
- Periodical
- Accession number :
- ejs42889121
- Full Text :
- https://doi.org/10.1038/nphys4112