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Mottness at finite doping and charge instabilities in cuprates

Authors :
Peli, S.
Conte, S. Dal
Comin, R.
Nembrini, N.
Ronchi, A.
Abrami, P.
Banfi, F.
Ferrini, G.
Brida, D.
Lupi, S.
Fabrizio, M.
Damascelli, A.
Capone, M.
Cerullo, G.
Giannetti, C.
Source :
Nature Physics; August 2017, Vol. 13 Issue: 8 p806-811, 6p
Publication Year :
2017

Abstract

The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p → Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcrregion of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.

Details

Language :
English
ISSN :
17452473 and 17452481
Volume :
13
Issue :
8
Database :
Supplemental Index
Journal :
Nature Physics
Publication Type :
Periodical
Accession number :
ejs42889121
Full Text :
https://doi.org/10.1038/nphys4112