Spectrographic Analysis of Tantalum and Tantalum Oxide

Authors :: Laib, Roger D.
Source :: Applied Spectroscopy; November 1963, Vol. 17 Issue: 6 p160-163, 4p
Publication Year :: 1963
Abstract: Tantalum metal is analyzed for 12 impurity elements by using a carrier distillation technique with a dc arc. The metal is oxidized in a muffle oven at 900°C. The oxide is mixed with a special carrier made of silver metal, silver chloride, and barium fluoride. A set of standards is included on each plate, and the analytical curves are linear for the concentration range used. The coefficient of variation varies from 30 to 87%