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Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 μm
- Source :
- Proceedings of SPIE; February 2017, Vol. 10114 Issue: 1 p101140Q-101140Q-7, 910268p
- Publication Year :
- 2017
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 10114
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs42134538
- Full Text :
- https://doi.org/10.1117/12.2250527