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The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co2FeZ(Z= Al, Si, Ga, Ge, In, Sn, Sb)

Authors :
Kourov, N.
Marchenkov, V.
Perevozchikova, Yu.
Weber, H.
Source :
Physics of the Solid State; May 2017, Vol. 59 Issue: 5 p898-903, 6p
Publication Year :
2017

Abstract

The electrical resistivity ρ(T) of the band ferromagnets Co2FeZ (where Z= Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev’s Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ(T) of these alloys in a magnetically ordered state at temperatures T< TCare predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ(T) only in the vicinity of the Curie temperature TCand above, as well as in the low-temperature range (at T≪ TC).

Details

Language :
English
ISSN :
10637834 and 10906460
Volume :
59
Issue :
5
Database :
Supplemental Index
Journal :
Physics of the Solid State
Publication Type :
Periodical
Accession number :
ejs42026777
Full Text :
https://doi.org/10.1134/S1063783417050183