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50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching
- Source :
- Applied Physics Letters; August 1981, Vol. 39 Issue: 3 p268-270, 3p
- Publication Year :
- 1981
Details
- Language :
- English
- ISSN :
- 00036951 and 10773118
- Volume :
- 39
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs41974157
- Full Text :
- https://doi.org/10.1063/1.92668