300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart CutT technology

MLA

Widiez, Julie, et al. “300 Mm InGaAs-on-Insulator Substrates Fabricated Using Direct Wafer Bonding and the Smart CutT Technology.” Japanese Journal of Applied Physics, vol. 55, no. 4, Apr. 2016. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edo&AN=ejs40347299&authtype=sso&custid=ns315887.

APA

Widiez, J., Sollier, S., Baron, T., Martin, M., Gaudin, G., Mazen, F., Madeira, F., Favier, S., Salaun, A., Alcotte, R., Beche, E., Grampeix, H., Veytizou, C., & Moulet, S. (2016). 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart CutT technology. Japanese Journal of Applied Physics, 55(4).

Chicago

Widiez, Julie, Sebastien Sollier, Thierry Baron, Mickael Martin, Gweltaz Gaudin, Frederic Mazen, Florence Madeira, et al. 2016. “300 Mm InGaAs-on-Insulator Substrates Fabricated Using Direct Wafer Bonding and the Smart CutT Technology.” Japanese Journal of Applied Physics 55 (4). http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edo&AN=ejs40347299&authtype=sso&custid=ns315887.