P-Type Doping of GaN by Mg<iopmath latex="$^+$"><SUP>+</SUP></iopmath> Implantation

Mg<iopmath latex="$^+$">⁺</iopmath> and Mg<iopmath latex="$^+$">⁺</iopmath>+P<iopmath latex="$^+$">⁺</iopmath> were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before <iopmath latex="$(\chi_{\min}=1.6%)$">(χ_min = 1.6%)</iopmath> and after implantation (<iopmath latex="$\chi_{\min}=4.1%)$">χ_min = 4.1%)</iopmath>. X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.