Electrical Properties of Synthesized Large-Area MoS2Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

MLA

Kim, Tae-Young, et al. “Electrical Properties of Synthesized Large-Area MoS2Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.” ACS Nano, vol. 10, no. 2, Feb. 2016, pp. 2819–26. EBSCOhost, https://doi.org/10.1021/acsnano.5b07942.

APA

Kim, T.-Y., Amani, M., Ahn, G. H., Song, Y., Javey, A., Chung, S., & Lee, T. (2016). Electrical Properties of Synthesized Large-Area MoS2Field-Effect Transistors Fabricated with Inkjet-Printed Contacts. ACS Nano, 10(2), 2819–2826. https://doi.org/10.1021/acsnano.5b07942

Chicago

Kim, Tae-Young, Matin Amani, Geun Ho Ahn, Younggul Song, Ali Javey, Seungjun Chung, and Takhee Lee. 2016. “Electrical Properties of Synthesized Large-Area MoS2Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.” ACS Nano 10 (2): 2819–26. doi:10.1021/acsnano.5b07942.