High-Voltage Large-Current 4H-SiC JBS Diodes

Authors :: Tao, Yong Hong
Bai, Song
Huang, Run Hua
Chen, Gang
Wang, Ling
Liu, Ao
Li, Yun
Zhao, Zhi Fei
Source :: Applied Mechanics and Materials; January 2015, Vol. 713 Issue: 1 p1023-1026, 4p
Publication Year :: 2015
Abstract: 3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm<superscript>-3</superscript> epilayer and 5.5Х5.5mm<superscript>2</superscript> schottky contact area has a blocking voltage (V<subscript>b</subscript> ) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm<superscript>2</superscript>, with a forward current measured up to 50A at V<subscript>F</subscript>=3.0V. The 4.5kV device with 50 um 1.2E15 cm<superscript>-3</superscript> epilayer and 5.5Х5.5mm<superscript>2</superscript> schottky contact area has a blocking voltage (V<subscript>b</subscript> ) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ.cm<superscript>2</superscript>, with a forward current of 30A at V<subscript>F</subscript>=3.7V.