Back to Search
Start Over
YBa2Cu3O7–x:Transport Properties and Defects at High Temperature
- Source :
- Zeitschrift für Naturforschung A; December 1989, Vol. 44 Issue: 12 p1167-1171, 5p
- Publication Year :
- 1989
-
Abstract
- Electrical resistivity measurements were carried out on polycrystalline YBa2Cu3O7-xat temperatures 300 < T < 1023 K and oxygen partial pressures 5 ·10-7≤ po2≤ 1 atm. The samples, equilibrated in the range from 5 ·10-4to 1 atm, show metallic behaviour, the one equilibrated at po2= 2 ·10-5shows a transition between metallic and semiconducting behaviour at 920 K, and that equilibrated at po2= 5 ·10-7shows semiconducting behaviour: for the latter the relevant resistivity is due to the oxygen-ion migration. The isotherms log σ vs. log po2(in the temperature range from 723 to 1023 K) show slopes of about 1/6 at 723 K (orthorhombic phase) and about 1/2 at 1023 K (tetragonal phase). These results are discussed in terms of appropriate defect models.
Details
- Language :
- English
- ISSN :
- 09320784 and 18657109
- Volume :
- 44
- Issue :
- 12
- Database :
- Supplemental Index
- Journal :
- Zeitschrift für Naturforschung A
- Publication Type :
- Periodical
- Accession number :
- ejs34998847
- Full Text :
- https://doi.org/10.1515/zna-1989-1206