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YBa2Cu3O7–x:Transport Properties and Defects at High Temperature

Authors :
Chiodelli, G.
Campari-Viganò, G.
Flor, G.
Source :
Zeitschrift für Naturforschung A; December 1989, Vol. 44 Issue: 12 p1167-1171, 5p
Publication Year :
1989

Abstract

Electrical resistivity measurements were carried out on polycrystalline YBa2Cu3O7-xat temperatures 300 < T < 1023 K and oxygen partial pressures 5 ·10-7≤ po2≤ 1 atm. The samples, equilibrated in the range from 5 ·10-4to 1 atm, show metallic behaviour, the one equilibrated at po2= 2 ·10-5shows a transition between metallic and semiconducting behaviour at 920 K, and that equilibrated at po2= 5 ·10-7shows semiconducting behaviour: for the latter the relevant resistivity is due to the oxygen-ion migration. The isotherms log σ vs. log po2(in the temperature range from 723 to 1023 K) show slopes of about 1/6 at 723 K (orthorhombic phase) and about 1/2 at 1023 K (tetragonal phase). These results are discussed in terms of appropriate defect models.

Details

Language :
English
ISSN :
09320784 and 18657109
Volume :
44
Issue :
12
Database :
Supplemental Index
Journal :
Zeitschrift für Naturforschung A
Publication Type :
Periodical
Accession number :
ejs34998847
Full Text :
https://doi.org/10.1515/zna-1989-1206