Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal

The electrical properties of a beryllium-doped cubic boron nitride (c-BN) single crystal grown on (111) diamond were investigated by using electron-beam-induced current measurements as well as current–voltage (I–V) and capacitance–voltage measurements. The I–Vmeasurements through silver electrodes on c-BN showed non-linear characteristics, revealing Schottky behavior. From the temperature dependence of resistivity, the activation energy of 0.24eV was obtained. We observed electron-beam-induced currents under the silver electrode, which means that a depletion region was formed due to the Schottky barrier. The diffusion length of minority carriers was determined by scanning the electron beam across the Schottky contact. The transient current after the electron-beam pulse was also measured at various temperatures.