Residual strains in GaN grown on 6H-SiC

Details

Language :

English

ISSN :

09259635

Volume :

6

Issue :

10

Database :

Supplemental Index

Journal :

Diamond and Related Materials

Publication Type :

Periodical

Accession number :

ejs3452833

Full Text :

https://doi.org/10.1016/S0925-9635(97)00122-2