Properties of homogeneously doped ZnSe single crystals obtained by a new growth method

ZnSe-In doped single crystals are obtained by a new vapour phase technique. The as-grown crystals are highly resistive and become n-type conductive after zinc vapour annealing. The evolution of electrical conductivity properties and photoluminescence spectra has been studied as a function of annealing temperature. This evolution has been interpreted in terms of a dissociation of complex deep centers and an exodiffusion of dopant impurities.