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MBE and MOCVD growth of AlGaAs-AlAs-GaAs double barrier multiple quantum well infrared detector
- Source :
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 1995, Vol. 35 Issue: 1 p176-179, 4p
- Publication Year :
- 1995
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 35
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology
- Publication Type :
- Periodical
- Accession number :
- ejs3414468
- Full Text :
- https://doi.org/10.1016/0921-5107(95)01346-6