Depth profiling of InAs/InP and In~xGa~1~-~xAs/InAs heterostructures grown by molecular beam epitaxy

Details

Language :

English

ISSN :

09215107

Volume :

28

Issue :

1

Database :

Supplemental Index

Journal :

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Publication Type :

Periodical

Accession number :

ejs3414164

Full Text :

https://doi.org/10.1016/0921-5107(94)90053-1