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Raman scattering study of vacancy-hydrogen related defects in silicon
- Source :
- Physica B: Condensed Matter; 2001, Vol. 308 Issue: 1 p206-209, 4p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 308
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Physica B: Condensed Matter
- Publication Type :
- Periodical
- Accession number :
- ejs3396388
- Full Text :
- https://doi.org/10.1016/S0921-4526(01)00722-0