Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

MLA

Sun, Jingya, et al. “Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy.” ACS Applied Materials & Interfaces, vol. 6, no. 13, July 2014, pp. 10022–27. EBSCOhost, https://doi.org/10.1021/am5026159.

APA

Sun, J., Yang, Y., Khan, J. I., Alarousu, E., Guo, Z., Zhang, X., Zhang, Q., & Mohammed, O. F. (2014). Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy. ACS Applied Materials & Interfaces, 6(13), 10022–10027. https://doi.org/10.1021/am5026159

Chicago

Sun, Jingya, Yang Yang, Jafar I. Khan, Erkki Alarousu, Zaibing Guo, Xixiang Zhang, Qiang Zhang, and Omar F. Mohammed. 2014. “Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy.” ACS Applied Materials & Interfaces 6 (13): 10022–27. doi:10.1021/am5026159.