Epitaxial Growth of SiC Epilayers for 10kV Schottky Diodes Using Chloride-Based CVD

A 100μm silicon carbide epilayer with mean doping concentration 6×10¹⁴ cm^-3 was achieved on 3 inch silicon carbide substrate using a growh rate of 30 μm/h. Hydrogen gas foil rotation was adopted to improve the doping uniformity. The intra-wafer thickness and doping uniformity was 1.83% and 7.51%, respectively. Schottky diodes fabricated on this epilayer presented a breakdown voltage of 10kV. This is the first report of 10kV schottky diodes fabricated on silicon carbide epilayer made in China.