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Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2or Si3N4buffer layer
- Source :
- Electronic Materials Letters; October 2013, Vol. 9 Issue: 1 p23-27, 5p
- Publication Year :
- 2013
-
Abstract
- Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage (VT), subthreshold slope (SS) and transconductance (gm), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and gm, program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.
Details
- Language :
- English
- ISSN :
- 17388090 and 20936788
- Volume :
- 9
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Electronic Materials Letters
- Publication Type :
- Periodical
- Accession number :
- ejs31292036
- Full Text :
- https://doi.org/10.1007/s13391-013-3176-1