Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

MLA

Teherani, Ferechteh Hosseini, et al. “Engineering Future Light Emitting Diodes and Photovoltaics with Inexpensive Materials: Integrating ZnO and Si into GaN-Based Devices.” Proceedings of SPIE, vol. 8626, no. 1, Mar. 2013, p. 86260L–86260L–12. EBSCOhost, https://doi.org/10.1117/12.2009999.

APA

Teherani, F. H., Look, D. C., Rogers, D. J., Bayram, C., Shiu, K. T., Zhu, Y., Cheng, C. W., Sadana, D. K., Teherani, F. H., Rogers, D. J., Sandana, V. E., Bove, P., Zhang, Y., Gautier, S., Cho, C.-Y., Cicek, E., Vashaei, Z., McClintock, R., & Razeghi, M. (2013). Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices. Proceedings of SPIE, 8626(1), 86260L–86260L–12. https://doi.org/10.1117/12.2009999

Chicago

Teherani, Ferechteh Hosseini, David C. Look, David J. Rogers, C. Bayram, K. T. Shiu, Y. Zhu, C. W. Cheng, et al. 2013. “Engineering Future Light Emitting Diodes and Photovoltaics with Inexpensive Materials: Integrating ZnO and Si into GaN-Based Devices.” Proceedings of SPIE 8626 (1): 86260L–86260L–12. doi:10.1117/12.2009999.