Electrostatic Effects at Organic Semiconductor Interfaces: A Mechanism for “Cold” Exciton Breakup

MLA

Yost, Shane R., and Troy Van Voorhis. “Electrostatic Effects at Organic Semiconductor Interfaces: A Mechanism for ‘Cold’ Exciton Breakup.” The Journal of Physical Chemistry - Part C, vol. 117, no. 11, Mar. 2013, pp. 5617–25. EBSCOhost, https://doi.org/10.1021/jp3125186.

APA

Yost, S. R., & Van Voorhis, T. (2013). Electrostatic Effects at Organic Semiconductor Interfaces: A Mechanism for “Cold” Exciton Breakup. The Journal of Physical Chemistry - Part C, 117(11), 5617–5625. https://doi.org/10.1021/jp3125186

Chicago

Yost, Shane R., and Troy Van Voorhis. 2013. “Electrostatic Effects at Organic Semiconductor Interfaces: A Mechanism for ‘Cold’ Exciton Breakup.” The Journal of Physical Chemistry - Part C 117 (11): 5617–25. doi:10.1021/jp3125186.