Back to Search
Start Over
Radiation effect on n-MOSFETs fabricated in a BiCMOS process
- Source :
- Nuclear Instruments and Methods in Physics Research Section B; 2002, Vol. 186 Issue: 1 p419-423, 5p
- Publication Year :
- 2002
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 186
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B
- Publication Type :
- Periodical
- Accession number :
- ejs2950968
- Full Text :
- https://doi.org/10.1016/S0168-583X(01)00861-8