High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering

Details

Language :

English

ISSN :

0168583X

Volume :

183

Issue :

1-2

Database :

Supplemental Index

Journal :

Nuclear Instruments and Methods in Physics Research Section B

Publication Type :

Periodical

Accession number :

ejs2950775

Full Text :

https://doi.org/10.1016/S0168-583X(00)00619-4