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A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
- Source :
- Nuclear Instruments and Methods in Physics Research Section B; 2001, Vol. 175 Issue: 1 p300-304, 5p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 175
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B
- Publication Type :
- Periodical
- Accession number :
- ejs2950318
- Full Text :
- https://doi.org/10.1016/S0168-583X(00)00640-6