Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon

Details

Language :

English

ISSN :

0168583X

Volume :

112

Issue :

1

Database :

Supplemental Index

Journal :

Nuclear Instruments and Methods in Physics Research Section B

Publication Type :

Periodical

Accession number :

ejs2944938

Full Text :

https://doi.org/10.1016/0168-583X(95)01228-1