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Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon
- Source :
- Microelectronic Engineering; 1999, Vol. 48 Issue: 1 p59-62, 4p
- Publication Year :
- 1999
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 48
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Periodical
- Accession number :
- ejs2931976
- Full Text :
- https://doi.org/10.1016/S0167-9317(99)00338-X