Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)

Details

Language :

English

ISSN :

00406090

Volume :

371

Issue :

1

Database :

Supplemental Index

Journal :

Thin Solid Films

Publication Type :

Periodical

Accession number :

ejs2748356

Full Text :

https://doi.org/10.1016/S0040-6090(00)00974-3