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Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method
- Source :
- Materials Science Forum; May 2012, Vol. 717 Issue: 1 p893-896, 4p
- Publication Year :
- 2012
-
Abstract
- We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 717
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs27471011
- Full Text :
- https://doi.org/10.4028/www.scientific.net/MSF.717-720.893