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Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method

Authors :
Choi, J.H.
Latu-Romain, Laurence
Baron, Thierry
Chevolleau, Thierry
Bano, Edwige
Source :
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p893-896, 4p
Publication Year :
2012

Abstract

We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.

Details

Language :
English
ISSN :
02555476 and 16629752
Volume :
717
Issue :
1
Database :
Supplemental Index
Journal :
Materials Science Forum
Publication Type :
Periodical
Accession number :
ejs27471011
Full Text :
https://doi.org/10.4028/www.scientific.net/MSF.717-720.893