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Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions

Authors :
Nagahisa, Yuichi
Tokumitsu, Eisuke
Source :
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p679-682, 4p
Publication Year :
2012

Abstract

To achieve graphene channel transistors which have high on/off drain current ratio and unipolar behavior of drain current – gate voltage (ID-VG) characteristics, we fabricated and characterized the top gated graphene channel transistors with n-type doped SiC source/drain regions. Graphene layer was formed on SiC by high temperature annealing in vacuum, and Al2O3 was used as a gate insulator. For the graphene channel transistor with heavily doped n-SiC source/drain regions (doping concentration ND=4.5x1019cm-3) and a 4~6ML graphene channel, ambipolar behavior was observed. On the other hand, when ND was reduced to 4.5x1018cm-3 and a thin graphene layer was used, the suppression of hole current in ID-VG curve was observed.

Details

Language :
English
ISSN :
02555476 and 16629752
Volume :
717
Issue :
1
Database :
Supplemental Index
Journal :
Materials Science Forum
Publication Type :
Periodical
Accession number :
ejs27470958
Full Text :
https://doi.org/10.4028/www.scientific.net/MSF.717-720.679