Wavelength dependence of prepulse laser beams on EUV emission from CO2reheated Sn plasma

Extreme ultraviolet (EUV) emission from laser-produced plasmas (LPP) centered at 13.5 nm is considered a leading candidate for the light source in future lithography systems. Tin is currently the best material for generating this EUV emission since it emits strongly within the 13.5 nm region due to its various ionic states (Sn8+-Sn14+). Highly efficient and low-debris LPPs are a pre-requisite for their use as light sources for EUV lithography. Tin plasmas generate debris that can damage collection optics over time. Techniques to mitigate debris are needed to extend the lifetime of these components and the system. Optimization of plasma conditions is necessary for increasing EUV emission and enhancing conversion efficiency (CE). Improving the source CE is necessary in order to reduce the cost of ownership and hence, develop a commercially viable lithography system for the semiconductor industry. One method to accomplish this is to reheat pre-formed plasma with a laser pulse to enhance EUV emission. This enhancement is achieved by controlling those plasma conditions necessary for optimizing EUV emission. We investigated the role of prepulse laser wavelength on prepulse plume formation and EUV in-band signal enhancement. A 6 ns Nd:YAG laser operating at 1064 nm and 266 nm was used for generating the prepulse plume. The expanding plume was then reheated by a 35 ns CO2laser operating at 10.6 m. The role of prepulse wavelength and energy on EUV conversion efficiency is discussed.