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Temperature-programmed evolution of low-energy, rare-gas ions implanted in Si(100) [Surface Science 330 (1995) L633-L638]

Authors :
Tesauro, M. R.
Underwood, G.
Kellerman, B. K.
Campion, A.
Source :
Surface Science; 1995, Vol. 340 Issue: 1 pL997-L997, 1p
Publication Year :
1995

Details

Language :
English
ISSN :
00396028
Volume :
340
Issue :
1
Database :
Supplemental Index
Journal :
Surface Science
Publication Type :
Periodical
Accession number :
ejs2722284
Full Text :
https://doi.org/10.1016/0039-6028(95)00810-1